Switching Dynamics of Ag-Based Filamentary Volatile Resistive Switching Devices—Part I: Experimental Characterization

Volatile resistive switching random access memory (RRAM) devices are drawing attention in both storage and computing applications due to their high ON-/ OFF-ratio, fast speed, low leakage, scalability. However, these relatively new the physical mechanisms still under investigation. A thorough understanding modeling of dynamics underlying filament formation self-dissolution utmost importance view future integration volatile neuromorphic systems arrays. To assess develop appropriate models, though, electrical properties device have be characterized. In this article, we present an extensive study Ag/SiO x -based RRAM devices. Important parameters, such as time, voltage, retention time investigated a function stimulation conditions. explanation is provided applicability discussed.